Hi-MO4m Design
Description
- Half-cut cell technology enables higher power and lower hot spot temperature because of low working current - Using M6 standard wafer Part of assembly line upgraded to 9BB, further improve power - Unique parallel connection design, more energy yield in case of shading - 35mm frame,front / back side maximum static loading: 5400Pa/2400pa - two grounding holes and one leakage hole at each corner - 8 mounting holes, adaptable to various mounting approaches - Split junction box, Cable Length 300mm (can be Customized) - Backsheet and junction box supporting 1500V system - Option: full Black module with Black frame and black Backsheet(60HPB) - Cell efficiency >22%, anti-LID, anti-PID, 1st year degradation ≤2% - Backsheet with Fluoride on both sides, resistant to ultraviolet radiation