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Hi-MO4m Design

Description

- Half-cut cell technology enables higher power and lower hot spot temperature because of low working current

- Using M6 standard wafer Part of assembly line upgraded to 9BB, further improve power

- Unique parallel connection design, more energy yield in case of shading

- 35mm frame,front / back side maximum static loading: 5400Pa/2400pa

- two grounding holes and one leakage hole at each corner

- 8 mounting holes, adaptable to various mounting approaches

- Split junction box, Cable Length 300mm (can be Customized)

- Backsheet and junction box supporting 1500V system

- Option: full Black module with Black frame and black Backsheet(60HPB)

- Cell efficiency >22%, anti-LID, anti-PID, 1st year degradation ≤2%

- Backsheet with Fluoride on both sides, resistant to ultraviolet radiation

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